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2 113 745

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C1

(51)

IPC

(21) (22)

Application

96124555/25, 1996-12-27

(22)

Actual filing date

1996-12-27

(45)

Published

1998-06-20

(72)

Inventor

Chistokhin I.B.Tishkovskij E.G.Zajtsev B.A.

(73)

Holder

Institut Fiziki Poluprovodnikov So Ran

METHOD FOR DETECTION AND MEASUREMENT OF INFRARED LIGHT FLOW Russian patent published in 1998 - IPC

Abstract RU 2113745 C1

FIELD: semiconductor instruments. SUBSTANCE: method involves using photoresistor which is made from selenium-doped silicon for detection and measuring of infrared light flow by means of application of direct voltage to resistor contacts, its exposition to light and detection of signal from load resistor. Voltage to be applied is in range of 1,4•103d < U < 1,7•103d. In addition method involves measuring current oscillations frequency f at load resistor and calculation of infrared light flow Pi(W/cm2) using equation Pi= fU/b, where d is length of sample between contact regions (cm), b is constant for each photoresistor; it is calculated using said equation in said voltage range for at least one know value Pi. EFFECT: increased alternated photo signal which is proportional to infrared light without modulation of light. 1 tbl

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RU 2 113 745 C1

Authors

Chistokhin I.B.

Tishkovskij E.G.

Zajtsev B.A.

Dates

1998-06-20—Published

1996-12-27—Filed

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