ULTRA HIGH FREQUENCY TRANSISTOR AMPLIFIER Russian patent published in 2021 - IPC H03F3/60 

Abstract RU 2751110 C1

FIELD: electric elements.

SUBSTANCE: invention relates to ultra high frequency technology, particularly, to transistor amplifiers suitable for use in systems with waveguide transmission lines as an input low-noise amplifier and power amplifier for the mm and EHF wavelength range. The amplifier is made waveguide-integral and comprises a dielectric substrate 1 with conducting surfaces 3, 4, 5, 9, 11, 12, a transistor 7 connected to external sources, installed along the waveguide 2, strip LC-elements 6, quarter-wave at the signal frequency slotline segments 8, a dielectric layer 10 separating the conductive surfaces 9, 11 and 12, 9.

EFFECT: technical result is provided stability of the amplification mode of the apparatus in a wide frequency range.

1 cl, 3 dwg

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Authors

Kuznetsov Gennadij Alekseevich

Lunkov Aleksandr Fedorovich

Dates

2021-07-08Published

2020-08-26Filed