FIELD: electric elements.
SUBSTANCE: invention relates to ultra high frequency technology, particularly, to transistor amplifiers suitable for use in systems with waveguide transmission lines as an input low-noise amplifier and power amplifier for the mm and EHF wavelength range. The amplifier is made waveguide-integral and comprises a dielectric substrate 1 with conducting surfaces 3, 4, 5, 9, 11, 12, a transistor 7 connected to external sources, installed along the waveguide 2, strip LC-elements 6, quarter-wave at the signal frequency slotline segments 8, a dielectric layer 10 separating the conductive surfaces 9, 11 and 12, 9.
EFFECT: technical result is provided stability of the amplification mode of the apparatus in a wide frequency range.
1 cl, 3 dwg
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Authors
Dates
2021-07-08—Published
2020-08-26—Filed