MONOLITHIC TRANSISTOR MICROWAVE GENERATOR Russian patent published in 2023 - IPC H03B5/30 H03B5/18 

FIELD: microwave technology.

SUBSTANCE: invention relates to microwave technology in the field of generating microwave oscillations, and in particular to millimeter wave transistor generators used in microwave transceivers, radar sensors, communication equipment, medical devices. The monolithic microwave transistor generator contains a field-effect transistor placed on the surface of the dielectric substrate and a stabilizing resonator connected to the microwave transistor gate. The source of the field-effect transistor is grounded through a section of the microwave transmission line using a through metalized hole in the substrate. The electrical length of the ground segment of the microwave transmission line connected to the source of the transistor is half the operating wavelength. The gate of the field-effect transistor is connected to the microwave stabilizing resonator by a segment of the microwave transmission line of electrical length equal to a quarter of the operating wavelength.

EFFECT: phase noise reduction and increased resistance to out-of-band spurious generation.

2 cl, 1 dwg