INSTALLATION FOR HIGH-TEMPERATURE VACUUM ANNEALING OF THIN FILMS WITH POSSIBILITY OF IN SITU OPTICAL OBSERVATION WITH HIGH RESOLUTION Russian patent published in 2021 - IPC H01L21/02 

FIELD: microelectronics, optics, catalysis, chemical industry and other fields.

SUBSTANCE: invention relates to a device for high-temperature vacuum annealing of thin films, coatings and materials. An installation for high-temperature vacuum annealing of thin films with the possibility of in situ optical observation with high resolution contains a vacuum chamber, a heated substrate holder equipped with a block of heat shields, a vacuum pumping system, an observation window, and an optical long-focus microscope. At the same time, the installation contains a system for optical monitoring of the film surface in situ, consisting of an optical long-focus microscope, a high-resolution digital camera, an illumination system, a quartz viewing window with a diameter of 140 mm and a system for recording and processing images, a thermal protection system consisting of a water cooling system, thermal a shutter screen located above the substrate holder, an automatic system for monitoring and maintaining the set temperature parameters of the installation, and the vacuum chamber is equipped with a water-cooled circuit, as well as a fitting for supplying a buffer gas, a system of interlocks and protection with alarm states in OwenCloud. The vacuum pumping system consists of a membrane backing pump, a turbomolecular high-vacuum pump and a vacuum line, a heated substrate holder with a diameter of 90 mm is made of stainless steel and consists of a tubular electric heater filled with a hermetic heat-conducting compound, a copper disk, a block of heat shields and thermal insulation.

EFFECT: invention increases reliability of the installation for high-temperature vacuum annealing of thin films, and provides the possibility of simultaneous implementation of high-vacuum high-temperature annealing and in situ observation of the morphology and structure of films during annealing.

3 cl, 3 dwg