CHEMICAL VAPOR DEPOSITION SYSTEM FOR GRAPHENE GROWTH Russian patent published in 2019 - IPC C23C16/26 

FIELD: chemistry.

SUBSTANCE: invention relates to CVD chemical vapor deposition and can be used for synthesis of carbon nanomaterials, such as graphene films, multilayer graphene, carbon nanotubes. System for chemical vapor deposition for growth of graphene comprises a tubular quartz reactor, a tubular furnace moving along the axis of the reactor using a substrate, a substrate holder, a gas inlet and adjustment system, a temperature control unit and an evacuation system. Quartz reactor and tubular furnace are installed on extending platform, both ends of reactor are connected to buffer reservoir, wherein one end of the reactor is connected to the buffer tank in series through the connector and through the compartments of the forced circulation of the gas stream. Connecting socket is equipped with substrate holder with built-in thermocouple. In particular cases of the invention implementation, the connector is installed stationary, and one of the reactor ends is made in the form of a capillary.

EFFECT: enabling implementation of a closed loop with forced circulation of gas, which reduces consumption of gases required for growth of graphene and other carbon nanomaterials, as well as reduced time of operation of the filling system and rotary pump, as well as simplified process of deposition.

3 cl, 1 dwg, 2 ex