FIELD: physical processes.
SUBSTANCE: invention relates to a UHF plasma reactor for plasma chemical deposition of a diamond coating on a hard alloy substrate, configured to adjust the temperature of indirect heating of the substrate. The UHF plasma reactor comprises a vacuum chamber with a resonator, an upper and side viewing windows, a system for pumping air from said vacuum chamber and supplying a gas mixture for depositing a diamond coating thereto, a UHF power source, and a conductive out-of-bounds ring configured for the substrate to be placed therein. The movable coolable base of the conductive out-of-bounds ring is configured to change the height of the inner surface of the conductive out-of-bounds ring when moving while maintaining a constant height of the outer surface thereof. The actuator is configured to ensure movement through the core of the bellows and the cooling pipeline of the coolable base of the conductive out-of-bounds ring by receiving signals of the adjuster and the software control tools ensuring reception and processing of the incoming signals of the infrared pyrometer. The infrared pyrometer is configured to control, stabilise, and adjust the indirect heating temperature of the substrate. The encoder is configured to form signals for the driver of the control stepper motor, determining the range of positioning of the substrate lying on the movable coolable base of the conductive out-of-bounds ring.
EFFECT: range of the possibilities of deposition of coatings is expanded while simplifying the design of the apparatus, reducing the dimensions thereof, and reducing the flow rate of the gas mixture and the consumed power.
3 cl, 3 dwg
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Authors
Dates
2021-12-30—Published
2020-08-27—Filed