METHOD FOR PURIFYING HEXACHLORODISILANE FROM IMPURITIES OF METAL CHLORIDES Russian patent published in 2021 - IPC C01B33/107 

FIELD: hexachlorodisilane purifying.

SUBSTANCE: invention relates to methods for purifying hexachlorodisilane used in microelectronics for a number of promising thin-film deposition processes in the field of manufacturing semiconductor memory chips, microcircuits, microprocessors. A method is proposed for the purification of hexachlorodisilane from metal chlorides, including the stages: a) preliminary purification of hexachlorodisilane by distillation to obtain 98-99% hexachlorodisilane with an impurity content of metal chlorides up to 350 ppm; b) saturation of the distilled hexachlorodisilane with gaseous silicon tetrafluoride at a temperature of 3-6°C with stirring; c) increasing the temperature of the mixture to 15-25°С; d) filtration through polymeric microfiltration membranes to purify hexachlorodisilane from the formed insoluble metal fluorides; and e) removal of dissolved silicon tetrafluoride by rectification of hexachlorodisilane at atmospheric pressure.

EFFECT: proposed method is suitable for efficient purification of hexachlorodisilane for use in microelectronics.

2 cl, 8 ex