METHOD OF PRODUCING HIGHER SILANES Russian patent published in 2012 - IPC C01B33/107 

Abstract RU 2470859 C2

FIELD: chemistry.

SUBSTANCE: invention relates to a method of producing dimeric and/or trimeric silicon compounds, particularly halogen-containing silicon compounds. Method comprises two steps. Step (a) involves nonthermal plasma treatment of the corresponding silicon compound, optionally in the presence of one or more silicon compounds, particularly hydrogen-containing compounds. After step (a), step (b) involves obtaining, in pure form, one or more silicon compounds from the formed phase. In particular, distillation processing is carried out to separate the formed reaction product which is a silicon compound. The silicon compound can be separated in high-purity state. The invention also includes an apparatus for realising the method, as well as use of the obtained silicon compounds.

EFFECT: invention provides a cheap method of producing dimeric and/or trimeric silicon compounds on an industrial scale.

20 cl, 1 ex, 1 dwg

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RU 2 470 859 C2

Authors

Lang Jurgen Ehrvin

Rauleder Khartvig

Mju Ehkkekhard

Dates

2012-12-27Published

2007-12-20Filed