FIELD: nanotechnology.
SUBSTANCE: invention relates to nanotechnology and can be used in nanoelectronics in the manufacture of infrared sensors. The InSb single crystal, which is the tip of one of the electrodes, is affected by a pulsed electric field in a two-electrode cell under normal conditions with an electric field strength equal to or more than 106 V/cm, pulse duration of 10-20 microseconds, decay duration of less than 1 microsecond and a duty cycle of 2. On the surface of the second electrode, covered with a dielectric layer with a thickness of 20-100 microns, a receiver is installed for collecting ready-made self-organizing InSb nanotubes made of oriented silicon plates, sitall plates or conductive tape.
EFFECT: resulting InSb nanotubes have a diameter of 50-100 nm and a length of 2-4 microns.
1 cl, 2 dwg
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