METHOD FOR OBTAINING 2D SILICON CARBIDE CRYSTALS BY ELECTROIMPULSE METHOD Russian patent published in 2019 - IPC C30B29/36 C30B30/02 B82B3/00 B82Y30/00 B82Y40/00 

FIELD: nanotechnologies.

SUBSTANCE: invention relates to the field of nanotechnology and can be used to obtain nanocomposite materials for creating power sources operating under extreme conditions. Method of obtaining 2D silicon carbide structures consists in applying a high pulsed voltage to a single-crystal silicon carbide electrode, and the single crystal is destroyed to form 2D structures that are deposited on the surface of the receiver. Separation of the layers from the crystal along the plane of cohesion occurs when a high-intensity pulsed electric field (above 10⁶ V/cm) with pulses with a duration of 10–20 mcs with a duty cycle of 3–20. Layering layer by layer from the surface of the silicon carbide single crystal occurs under normal conditions (298 °K, 10⁵ Pa) in the air, so you do not need to create a closed reactor.

EFFECT: technical result of the invention is to obtain isolated 2D silicon carbide single crystals with a thickness of 10–50 nm in an energy efficient and highly productive way.

1 cl, 2 dwg