FIELD: laser technology.
SUBSTANCE: invention relates to laser technology. The visible light emitting semiconductor laser device comprises at least one vertical cavity surface radiation (VCSEL) laser emitting in the infrared (IR) range of the spectrum and integrated with an IR to visible light converter. Wherein each VCSEL contains: a semiconductor substrate; a lower distributed Bragg reflector layer disposed on the semiconductor substrate; a semiconductor contact layer of the first conductivity type located on the layer of the lower distributed Bragg reflector; a first contact pad located on a portion of the semiconductor contact layer of the first conductivity type; an active region layer located on a semiconductor contact layer of the first conductivity type; a semiconductor contact layer of the second conductivity type located on the active region layer; a second contact pad located on a portion of the semiconductor contact layer of the second conductivity type; and an IR-to-visible light converter, which is a metasurface capable of nonlinear conversion of IR radiation into visible light, containing at least an array of nanocavities and located on a semiconductor contact layer of the second conductivity type, while the metasurface additionally performs a feedback function for the VCSEL resonator.
EFFECT: invention provides at least stability of operation, high radiation power, long service life, compactness, implementation of the device in the form of a single microcircuit.
23 cl, 11 dwg
