VCSEL MATRIX WITH HIGH EFFICIENCY Russian patent published in 2016 - IPC H01S5/42 H01S5/183 

Abstract RU 2587497 C2

FIELD: laser engineering.

SUBSTANCE: invention relates to laser engineering. VCSEL array comprises several VCSELs arranged side by side on a common substrate (1). Each VCSEL is formed of at least top mirror (5, 14), active region (4), current injection layer (3) and undoped bottom semiconductor mirror (2). Current injection layer (3) is arranged between active region (4) and bottom semiconductor mirror (2). Least upper layer of substrate (1) is electrically conducting. Trenches (8) and/or holes are formed between bottom semiconductor mirrors (2) of said VCSELs so that they enter said upper layer of said substrate (1). Metallisation (9) electrically connects upper layer of substrate (1) with current injection layer (3) through said trenches (8) and/or holes.

EFFECT: technical result consists in providing possibility of uniform injection of current with high efficiency and high radiation power density.

7 cl, 7 dwg

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RU 2 587 497 C2

Authors

Gerlakh Filipp Khenning

Dates

2016-06-20Published

2012-03-02Filed