GALLIUM ARSENIDE POWER AMPLIFIER OUTPUT STAGE Russian patent published in 2022 - IPC H03F3/21 H03F3/45 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of analog microelectronics and can be used as a gallium arsenide output stage of a power amplifier of various analog devices that can operate under conditions of penetrating radiation, low and high temperatures. The effect is achieved due to the fact that the gallium arsenide output stage of the power amplifier contains an input (1) and an output (2) of the device, an input (3) field-effect transistor with a control p-n junction, the gate of which is connected to the input (1) of the device, and the drain is connected to the first (4) power supply bus, the output (5) bipolar transistor, the emitter of which is connected to the output (2) of the device, and the collector is connected to the second (6) power supply bus. The gates of the first (7) and second (8) auxiliary field-effect transistors with a control p-n-junction are connected to the second (6) power supply bus. The drain of the first (7) auxiliary field-effect transistor with a control p-n-junction is connected to the base of the output (5) bipolar transistor. The gate of the second auxiliary field-effect transistor with a control p-n-junction is additionally connected to its source through the first (9) current-stabilizing two-pole. Additionally, the first (10) and second (11) additional bipolar transistors, as well as the first (12) and second (13) additional resistors are introduced into the gallium arsenide output stage of the power amplifier. The source of the input (3) field-effect transistor with a control p-n-junction is connected to the output (2) of the device, and its drain is connected to the first (4) power supply bus through the first (12) additional resistor and is connected to the emitter of the first (10) additional bipolar transistor. The emitter of the second (11) additional bipolar transistor is connected to the first (4) power supply bus through the second (13) additional resistor, and its base is connected to the base and collector of the first (10) additional bipolar transistor and is connected to the drain of the second (8) auxiliary field transistor with a control p-n-junction. The collector of the second (11) additional bipolar transistor is connected to the drain of the first (7) auxiliary field-effect transistor with a control p-n junction, the source of which is connected to the second (6) power supply bus through the third (14) additional resistor.

EFFECT: creating an output stage of a power amplifier implemented only on gallium arsenide JFET field-effect transistors with a control p-n junction and GaAs bipolar p-n-p transistors.

4 cl, 8 dwg