DIFFERENTIAL AMPLIFIER ON ARSENIDE-GALLIUM FIELD-EFFECT TRANSISTORS Russian patent published in 2022 - IPC H03F3/45 

FIELD: radio engineering.

SUBSTANCE: in a differential amplifier on arsenide-gallium field-effect transistors, current-stabilizing two-pole (7) contains first (11) and second (12) auxiliary field-effect transistors, gates of which are connected to first (6) bus of a power supply source, a source of first (11) auxiliary field-effect transistor is connected to first (6) bus of the power supply source through first (13) auxiliary resistor, a source of second (12) auxiliary field-effect transistor is connected to first (6) bus of the power supply source through second (14) auxiliary resistor, drains of first (11) and second (12) auxiliary field-effect transistors are connected to combined sources of first (4) and second (5) input field-effect transistors, wherein the second outputs of first (8) and second (9) load resistors are connected to a source of additional field-effect transistor (15), a gate of which is connected to a drain of second (5) input field-effect transistor, and a drain is connected to second (10) bus of the power supply source.

EFFECT: increase in the voltage gain.

4 cl, 8 dwg