METHOD FOR DETERMINING CONCENTRATION OF DONOR BACKGROUND IN CdXHg1-XTe STRUCTURES Russian patent published in 2017 - IPC H01L31/18 

FIELD: electricity.

SUBSTANCE: method for determination of the concentration of the donor background in the Cd_xHg_1-xTe structures, including the ion etching of the homogeneous vacancy-doped Cd_xHg_1-xTe structures having p-type conductivity with Ar⁺ ions having energies of 100-2000 eV, and the measurement of electron density at 77 K, is supplemented with additional requirements that the ion etching shall be performed in Cd_xHg_1-xTe with x=0-0,4 composition, modifying the material characteristics at the depth not less than 5 micron, while the electron density is determined in the total volume of the converted n-layer of the measurement and analysis of the field dependencies of the Hall coefficient and conductivity at 77 K after relaxation of electrical parameters of the structure within 10³-10⁵ min at the storage temperature of 350-300 K.

EFFECT: creation of the method of determination of the donor background concentration in Cd_xHg_1-xTe, which takes into account the existence of a strong relaxation of electrical parameters of the samples after the cessation of ion etching.

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