METHOD FOR DETERMINING DISTANCE BETWEEN NV DEFECT AND SUBSTITUTE NITROGEN N IN DIAMOND CRYSTAL Russian patent published in 2022 - IPC G01N24/10 G01N21/64 

FIELD: distance determination.

SUBSTANCE: invention is intended for determination of the distance between the NV defect and the substituting nitrogen N in a diamond crystal. The substance of the invention lies in the fact that a diamond crystal sample is exposed to focused laser radiation, which excites photoluminescence (PL) in the working volume of the sample, by which an optically detectable magnetic resonance (ODMR) signal is recorded, and a frequency-tunable radio-frequency electromagnetic field modulated by a low frequency, the PL intensity of the NV defect is measured in the working volume of the diamond crystal at different frequencies of the tunable radio frequency electromagnetic field, then, the ratio of the intensity of the ODMR side line caused by the interaction of the NV defect with the substituting nitrogen N in the diamond crystal to the intensity of the central line of the ODMR NV defect at different frequencies of the tunable radio frequency electromagnetic field is determined, and the distance between the NV defect and the substituting nitrogen N in the diamond crystal is determined using previously constructed calibration dependence of the distance between the NV defect and the substituting nitrogen N in the diamond crystal on the ratio of the intensity of the ODMR side line due to the interaction of the NV defect with the substituting nitrogen N in the diamond crystal, to the intensity of the central line of the ODMR of the NV defect, while to construct the above-mentioned calibration dependence, the intensity of the PL of the NV defect is measured in the working volume of control samples of a diamond crystal with a known concentration of substituting nitrogen N, for each control sample, the ratio of the intensity of the ODMR side line due to the interaction of the NV defect with substituting nitrogen N, to the intensity of the central line of the ODMR NV defect at different frequencies of the tunable radio frequency electromagnetic field, the first calibration curve of the ratio of the intensity of the ODMR side line due to the interaction of the NV defect with the substituting nitrogen N in the diamond crystal is taken, to the intensity of the central line of the ODMR NV defect on the concentration of the substituting nitrogen N and a calibration curve of the distance between the NV defect and the substituting nitrogen N is built in the diamond crystal on the ratio of the intensity of the side line of the ODMR, due to the interaction of the NV defect with the substituting nitrogen N in the diamond crystal, to the intensity of the central ODMR lines of the NV defect by converting the concentrations of the substituting nitrogen N into the distance between the NV defect and the substituting nitrogen N according to a certain ratio.

EFFECT: simplification of the method for determining the distance between the NV defect and the substituting nitrogen N in a diamond crystal.

7 cl, 7 dwg