FIELD: nanotechnology.
SUBSTANCE: invention relates to nanoelectronics and is used to create a non-volatile random access memory apparatus. The technical result is achieved by the electrical circuit of a 4-transistor memory cell of a static primary memory apparatus with a radioactive power source containing a common bus, a power bus, an address bus, a first and a second bit lines, a first and a second control n(p)-channel MOS-transistors, a first and a second switching n(p)-channel MOS-transistors, and using the radioactive emission source built into the RAM matrix as a generator of photocurrents in the load diodes of the trigger cell.
EFFECT: reduction in the power consumption and increase in the degree of integration.
3 cl, 6 dwg
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| MEMORY UNIT | 0 |
|
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