METHOD OF PRODUCING MONOCRYSTALLINE SiC Russian patent published in 2017 - IPC C30B23/00 C30B23/06 C30B29/36 C23C14/24 

FIELD: physics.

SUBSTANCE: method includes cell growth 1 of crucible 6 with SiC source 12 and docked on the lid 7 of the crucible 6 of seeding plate SiC 11 establishment of cell growth 1 through heat by heater 4, taking into account the insulating ability of thermal screen 3 necessary axial temperature distribution, secured high temperature gradients in the upper and lower zones of growth chambers and low temperature gradients in the zone of maximum heating located between the upper and lower zones, in which the growth chamber at a temperature that ensures that sublimation is a working volume of the crucible, with sublimation of spend in the crucible 6, lid 7 which is docked with the persistence of crucible on a ledge, on the inner surface of the side walls of the crucible, the height H of which exceeds the longitudinal dimension h of the working volume of the crucible and the part of the side walls above the lid 7 of the crucible 6 is located in the upper region of the growth chamber such that the end face 10 of the side wall of the crucible is placed at a temperature of 1000 to 1500°C.

EFFECT: enables to increase the output of high-quality monocrystalline ingots of SiC and reduce costs.

6 cl, 1 dwg, 1 tbl