POWERFUL HIGH-FREQUENCY AND SUPER HIGH-FREQUENCY BALANCE TRANSISTOR Russian patent published in 2008 - IPC H01L29/72 

FIELD: electricity.

SUBSTANCE: invention is related to semi-conductor electronics and may be used in structures of powerful HF and SHF semi-conductor devices. Invention allows to decrease coefficient of non-linear distortions of powerful HF and SHF balance transistor, which is intended for operation in push-pull circuits of power amplification and which contains two identical rows of transistor cells, platforms of contact metallisation of input areas of every of which are connected with wire conductors with input electrode that corresponds to this row. For this purpose metallised platforms and wire conductors are installed symmetrically relative to casing symmetry axis.

EFFECT: provides more accurate matching of frequency dependencies of their power amplification coefficients.

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