HIGH-POWER MICROWAVE FIELD-EFFECT TRANSISTOR Russian patent published in 2025 - IPC H10D30/60 

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic engineering and can be used as active elements of microwave devices. Powerful microwave field-effect transistor is made on a semi-insulating substrate with an active layer of high conductivity in the form of a periodic set of cells, wherein inside each cell there are parallel source, gate and drain electrodes, between the cells there are areas of semi-insulating material, and inside the cell the gate electrode is located between the source-drain electrodes, like source and drain electrodes from different cells are electrically connected, forming transistor signal summing circuits, at that, on the semi-insulating area between the cells there is an additional electrode connected by one end to the summation gate circuits, gate electrode of the cell is made of several separate subgates parallel to the source and drain electrodes, which are located along a line parallel to the source, separated by semi-insulating areas and connected by bridges with the said additional electrode, and source, drain electrodes and additional gate electrode are made elongated.

EFFECT: invention ensures reduction of overall dimensions of a powerful field-effect transistor, improvement of electrical characteristics, increase of useful power per unit area of the transistor plate.

1 cl, 2 dwg, 2 tbl