POWERFUL MICROWAVE TRANSISTOR Russian patent published in 2021 - IPC H01L29/772 

FIELD: semiconductor technology.

SUBSTANCE: invention relates to electronic semiconductor technology, in particular to the design of high-power ultrahigh-frequency (microwave) transistors, and can be used to create radio-electronic receiving and transmitting equipment based on them. A powerful microwave transistor contains a ceramic housing with a metal flange, strip input and output terminals located on the sides of the ceramic housing, a transistor crystal, connecting wire conductors connecting the contact pads on the transistor crystal with input and output terminals, despite the fact that the metal flange performs the function of a common transistor output. A crystal based on a gallium nitride heterostructure with high electron mobility on a silicon carbide substrate is used as a transistor crystal, while several transistor structures are placed on the transistor crystal, the number of which is determined by the required output power of the transistor. The contact pads of the gates of transistor structures are connected by connecting wire conductors to the input terminal, and the contact pads of the drains of transistor structures are connected to the output terminal, the contact pads of the sources of transistor structures located on the underside of the transistor crystal are connected to a metal flange by soldering or electrically conductive glue.

EFFECT: invention provides the possibility of increasing the efficiency of a powerful microwave transistor.

1 cl, 2 dwg