METHOD FOR INCREASING SPEED OF TRANSISTORS AND TRANSISTOR INTEGRATED CIRCUITS Russian patent published in 2023 - IPC H01L31/16 

FIELD: electronics; microelectronics.

SUBSTANCE: method for controlling the speed of transistors and transistor integrated circuits includes exposing the semiconductor structures of transistors and transistor integrated circuits to a photon flux from an LED or a low-power laser, while transistors, transistor integrated circuits, an LED or a low-power laser are placed in one housing, and affecting the semiconductor structures of transistors and transistor integrated circuits are carried out by a continuous stream of photons from an LED or a low-power laser during the operation of transistors and transistor integrated circuits.

EFFECT: increasing the speed of semiconductor devices and integrated circuits.

1 cl, 5 dwg