INTEGRAL SCHEME OF A QUICK-WORKING MATRIX RECEIVER OF OPTICAL RADIATION Russian patent published in 2017 - IPC H01L31/11 H01L31/18 

FIELD: physics.

SUBSTANCE: integrated circuit of a high-speed matrix receiver of optical radiation contains an electrical circuit consisting of a radiation receiving phototransistor and amplifying transistor, the collectors of transistors are connected to the power bus, the phototransistor base through the resistance of the phototransistor in the base circuit is connected to the common bus, the phototransistor emitter is connected to the base of the amplifying transistor, which is connected to the common bus through the resistance in the base circuit of the amplifying transistor, its emitter It is connected to the output bus which is connected to the common bus through the load resistance, the structure comprising a plurality of phototransistors forming a 2-dimensional rectangular column matrix of phototransistors and a plurality of amplifying transistors forming a 2-dimensional rectangular matrix of columns of phototransistors, and a plurality of amplifying transistors forming a row of a matrix, wherein the phototransistor emitters are connected to respective bit lines that are connected to the base regions of the row of the amplifying transistors by respective columns, the amplifiers of the amplifying transistors being connected to the output line. In this case, the design of the integrated circuit of a high-speed matrix optical radiation receiver consists of a silicon semiconductor substrate of the n(p) type of conductivity, on the reverse surface of which is n⁺ (p⁺)-layer, a dielectric, contact windows, an output line, a phototransistor and a reinforcing transistor, of the p(n)-type conductivity region are disposed on the face of the plate, and a plurality of phototransistors are formed on the front surface of the substrate, columns of a 2-dimensional matrix, and a plurality of amplifying transistors forming a row of a matrix having a common collector region in which the base regions of the p(n)-type conductivity are located, wherein their area is equal to the one of the light beam, in them, respectively, n⁺ (p⁺) regions of emitters are placed on which are connected their electrodes connected to the corresponding bit lines of the columns connected to the electrodes of the corresponding bases of the row of amplifying transistors whose emitters have emitter electrodes connected to the output bus.

EFFECT: increased speed and sensitivity of photodetectors.

2 cl, 3 dwg