METHOD OF POWER TRANSISTOR OPERATION Russian patent published in 2024 - IPC H01L27/14 H01L31/16 

FIELD: physical electronics.

SUBSTANCE: invention relates to operation of power bipolar and field transistors, and can be used in household radioelectronic equipment and power electronics. Method of forming a pair of a power transistor and an electromagnetic radiation emitter involves exposing a semiconductor transistor structure to a continuous stream of electromagnetic radiation from the emitter for implementation of constant generation in semiconductor structure of transistor of non-equilibrium charge carriers, according to invention under action of continuous flow of electromagnetic radiation for implementation of constant generation of non-equilibrium charge carriers in semiconductor transistor structure of power bipolar or field transistor source of electromagnetic radiation used is a source of electromagnetic radiation in the infrared range.

EFFECT: increase in the bipolar transistor current transfer coefficients, increase in the specific steepness of the gate of the field transistor, increase in the collector and drain currents, increase in the quiescent current of the amplifying stages, reduction of switching thresholds, increase of input sensitivity, reduction of nonlinear distortions.

1 cl, 5 dwg