METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE OF A MULTIJUNK PHOTOCONVERTER Russian patent published in 2022 - IPC H01L31/18 

FIELD: electronic engineering.

SUBSTANCE: Invention relates to electronic engineering, and in particular to methods for manufacturing semiconductor structures of multi-stage (multi-junction) photoelectric converters of optical radiation with connecting elements between transitions. A method for manufacturing a semiconductor structure of a multi-junction photoconverter includes sequential formation of layers of n-type conductivity and p-type conductivity on a semiconductor substrate by the method for gas-phase epitaxy from organometallic compounds, forming at least two n-p or p-n diodes. The layers of diodes conjugated with each other are separated by introducing into the conjugation zone the components of microparticles made of a conductive or semiconductor material, the dimensions of which exceed the thickness of the space charge region in the considered conjugation zone, and the band gap of the material of the microparticles is greater than the band gap of the material of the underlying components in the direction from the light source . At the same time, the growth of the diode layer located on the layer of microparticles is carried out in sublayers with a thickness of 50-150 nm with an interruption in the supply of organometallic compounds for 10-15 seconds with a constant supply of hydrogen.

EFFECT: invention provides an increased efficiency of photoconversion of a semiconductor structure manufactured according to the invention.

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