METHOD FOR MANUFACTURING LASER PHOTOELECTRIC CONVERTER Russian patent published in 2023 - IPC H01L31/18 

Abstract RU 2791961 C1

FIELD: photoelectric laser radiation converters.

SUBSTANCE: method for manufacturing a photoelectric laser radiation converter includes growing an n-InGaAsP base layer, a p+-InGaAsP layer by liquid-phase epitaxy in a stream of purified hydrogen on an n-InP substrate, forming a diffusion p-n junction, thinning the InP substrate, forming front and rear ohmic contacts, etching of the separating mesa. In this case, undoped semiconductor materials InP, InAs, and GaAs are used as sources of components for the melt.

EFFECT: method makes it possible to obtain a gradient p-n junction with a controlled depth and doping profile in a single technological process with the growth of epitaxial layers of the heterostructure, which ensure the photosensitivity of the photoconverter in the wavelength range of 1.06-1.55 μm.

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RU 2 791 961 C1

Authors

Potapovich Natal'Ya Stanislavovna

Khvostikov Vladimir Petrovich

Malevskaya Aleksandra Vyacheslavovna

Dates

2023-03-14Published

2022-06-03Filed