FIELD: photoelectric laser radiation converters.
SUBSTANCE: method for manufacturing a photoelectric laser radiation converter includes growing an n-InGaAsP base layer, a p+-InGaAsP layer by liquid-phase epitaxy in a stream of purified hydrogen on an n-InP substrate, forming a diffusion p-n junction, thinning the InP substrate, forming front and rear ohmic contacts, etching of the separating mesa. In this case, undoped semiconductor materials InP, InAs, and GaAs are used as sources of components for the melt.
EFFECT: method makes it possible to obtain a gradient p-n junction with a controlled depth and doping profile in a single technological process with the growth of epitaxial layers of the heterostructure, which ensure the photosensitivity of the photoconverter in the wavelength range of 1.06-1.55 μm.
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Authors
Dates
2023-03-14—Published
2022-06-03—Filed