METHOD FOR MANUFACTURING THE INGAASP/INP HETEROSTRUCTURE OF PHOTOCONVERTER Russian patent published in 2018 - IPC H01L31/18 

FIELD: manufacturing technology.

SUBSTANCE: method for manufacturing InGaAsP/InP heterostructure of a photoconverter involves sequential growth by gas phase epitaxy from organometallic compounds on an InP substrate in a purified hydrogen stream under reduced pressure at the epitaxial temperature of the InP buffer layer from trimethylindium and phosphine and a layer In_xGa_1-xAs_yP_1-y, where 0.59<x<0.80 and 0.55<y<0.92, from trimethylindium, triethylgallium, arsine and phosphine by successive growth of the sublayers In_xGa_1-xAs_yP_1-y thickness not more than 100 nm. After growing each sublayer of In_xGa_1-xAs_yP_1-y terminate the supply of trimethylindium, triethylgallium, arsine and phosphine by (5–30) s.

EFFECT: invention provides improvement in the quality of crystal bonding control.

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