METHOD OF MAKING SEMICONDUCTOR STRUCTURE WITH p-n JUNCTIONS Russian patent published in 2012 - IPC H01L31/04 

FIELD: physics.

SUBSTANCE: method of making a semiconductor structure involves successive formation of n- and p-type layers on a semiconductor substrate via epitaxial growth, said layers forming not less than two interfaced two-layer components with n-p or p-n junctions between the layers. According to the invention, every two neighbouring components are interfaced with each other by microparticles of a conducting or semiconducting material introduced into the component interfacing zone, wherein the size of said particles is greater than the thickness of the space-charge region in said interfacing zone.

EFFECT: high efficiency of photoelectric conversion.

2 cl, 1 ex