HETEROSTRUCTURE BASED ON THE JOSEPHSON TUNNEL JUNCTION SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR WITH INTEGRAL SHUTTING Russian patent published in 2022 - IPC H01L39/22 

FIELD: superconductors.

SUBSTANCE: heterostructure based on a superconductor-insulator-superconductor (SIS) Josephson tunnel junction includes a silicon substrate, the first, second, and third niobium layers separated by a barrier layer, and an integral shunting element of the SIS junction. The integral shunting element is made in the form of a superconductor - insulator - normal metal (SIN) junction located coaxially with the said SIS junction, and the radius r of the SNJ transition is selected from the condition of a given degree of shunting. The first layer of niobium is placed on the substrate, the first layer of aluminum with the formed barrier layer of aluminum dioxide and the second layer of aluminum are placed on top of it, in the central part of which the second layer of niobium with an outer radius r1 is placed, jointly forming a SIN junction. The third layer of niobium contacts only the second layer of niobium and is separated from said structure by a layer of silicon dioxide.

EFFECT: providing greater compactness while expanding the frequency range of operation of Josephson tunnel junctions.

2 cl, 11 dwg