FIELD: instrument making.
SUBSTANCE: substance of the invention: DTN on the basis of a multi-layer thin-film heterostructure comprises two superconductors that form electrodes, and a layer with metal conductivity between them from a metal-alloyed semiconductor. The layer has a locally non-uniform structure and is made as capable of simultaneous formation of two independent current transport channels in its volume, one of which represents a combination of chains of admixture atoms of metal that connect both electrodes and form quasi-unidimensional channels with metal conductivity for transport of superconducting current, and the other one - consists of separately arranged admixture atoms of metal, which form localised conditions of admixture centres and provide for transport of normal tunnel current, besides, the specified quasi-unidimensional channels represent internal shunts for a tunnel current in the layer. The method includes serial application of the first and second layers of the superconductor onto the substrate, a layer of the metal-alloyed semiconductor between them, formed by spraying of the semiconductor and the metal.
EFFECT: elimination of direct flow of current via a layer with provision of resonance mechanisms of current transport, increased specific voltage and differential resistance of a DTN; improved reproducibility of parameters due to usage of thicker layers of an alloyed conductor.
17 cl, 8 dwg, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
METHOD OF MAKING DEVICE WITH SUBMICRON JOSEPHSON π-CONTACT | 2015 |
|
RU2599904C1 |
HETEROSTRUCTURE BASED ON THE JOSEPHSON TUNNEL JUNCTION SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR WITH INTEGRAL SHUTTING | 2022 |
|
RU2786616C1 |
SUPERLATTICE | 1992 |
|
RU2062529C1 |
SUPERCONDUCTING TUNNEL DIODE | 1988 |
|
SU1575858A1 |
ELECTRONIC DEVICE BASED ON A SINGLE-ELECTRON TRANSISTOR THAT IMPLEMENTS A NEGATIVE DIFFERENTIAL RESISTANCE | 2020 |
|
RU2759243C1 |
SOLAR PHOTOELECTRIC SUBMODULE | 2010 |
|
RU2442245C1 |
NANOSIZE STRUCTURE WITH QUASI-ONE-DIMENSIONAL CONDUCTING TIN FIBRES IN GaAs LATTICE | 2012 |
|
RU2520538C1 |
HIGH-FREQUENCY SUPERCONDUCTING MEMORY ELEMENT | 2013 |
|
RU2554612C2 |
TUNNEL DEVICE MANUFACTURING PROCESS | 1996 |
|
RU2106041C1 |
RESONANCE-TUNED SEMICONDUCTOR DEVICE BUILT AROUND QUANTUM BEATS | 2003 |
|
RU2269182C2 |
Authors
Dates
2014-01-10—Published
2012-04-17—Filed