METHOD FOR MANUFACTURING THIN-FILM TUNNEL JUNCTIONS BY THE METHOD OF SEPARATE LITHOGRAPHY Russian patent published in 2021 - IPC H01L39/24 

FIELD: microelectronics.

SUBSTANCE: invention relates to the technology of microelectronics and can be used in the manufacture of thin-film superconducting structures. The method for manufacturing thin-film tunnel junctions by the method for separate lithography includes the formation of the first layer of aluminum by the first lithography, the application of a resist under the second lithography of the second metal layer, exposure in the lithograph, the development of the resist, the formation of a tunnel barrier and the deposition of the second metal layer. Before the formation of the tunnel barrier, the natural oxide is removed and the surface of the first layer of aluminum is cleaned by ion or plasma etching, and the tunnel barrier is formed on the surface subjected to said etching.

EFFECT: simplification of manufacturing technology that does not require chemical etching and reduction of requirements for the choice of materials for layers of normal metal, as well as the formation of a high-quality tunnel barrier of arbitrary controlled transparency.

6 cl, 8 dwg