METHOD OF MAKING TUNNEL JUNCTION WITH DOUBLE INSULATION Russian patent published in 2024 - IPC H10N60/01 

FIELD: microelectronics.

SUBSTANCE: invention relates to thin-film microelectronics and can be used in designing integrated microwave circuits. Method of forming a tunnel junction includes forming a three-layer structure of a tunnel junction by applying a first layer of metal on a dielectric substrate, making a tunnel barrier from Al/AlO_x on the surface of the first metal layer, application on top of formed tunnel barrier layer of second metal and layer of third metal in contact with layer of second metal with electrical contacts, besides, after formation of three-layer structure of first metal/Al/AlO_x/second metal and formation of topology of lower electrode by method of photolithography or direct electron lithography is formed in mask of resist placed on layer of second metal, window with diameter D1, through which selective plasma-chemical etching of layer of second metal is carried out to stop layer of tunnel barrier Al/AlO_x, after which, on top of the same resist, a layer of a first SiO₂ insulator is deposited and the resist is removed together with said first insulator, then forming a resist mask in the centre of the transition region with diameter D2, selected from the condition D2 is less than D1, second layer of insulator SiO₂ is sprayed on top and insulator with resist mask is removed, after which layer of third metal is sprayed to create electric contact.

EFFECT: invention provides simplification of multistage process of tunnel junctions manufacturing while maintaining their quality, higher reliability and reproducibility of parameters, greater compactness due to elimination of bridges for anodization, elimination of liquid anodization and additional plasma-chemical etching for removal of anodization bridges.

3 cl, 4 dwg