FIELD: micro- and nanoelectronics.
SUBSTANCE: invention relates to the field of micro- and nanoelectronics and can be used for the manufacture of generators in the terahertz frequency range with a power of 1 mW or more. A transient-time diode for generating terahertz radiation is proposed, consisting of a semiconductor substrate with two heavily doped regions and metal contacts deposited on them, between which there is an undoped transient slot, in which sections with an increased slot width are included, and next to each extended slot section is located shunting capacitive jumper connecting the metal contacts of the transit diode.
EFFECT: ensuring stable generation of terahertz radiation, improving the matching of the transit diode with the antenna, and increasing the generation power.
2 cl, 6 dwg
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