FIELD: micro- and nanoelectronics.
SUBSTANCE: invention relates to the field of micro- and nanoelectronics and can be used for the manufacture of generators and receivers of terahertz radiation. Transit diode with variable injection for generation and detection of terahertz radiation, in which regions of strong single-type doping are formed on a semiconductor substrate with undoped span gaps of the same width between them; improves the matching of the diode with the antenna, increases the generation power and increases the sensitivity of radiation detection.
EFFECT: proposed design of the transient diode ensures its matching with the antenna, increases the generation power and the detection sensitivity.
1 cl, 4 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| TRANSIENT-TIME DIODE WITH DISTRIBUTED INDUCTIVE CAPACITANCE COMPENSATION FOR TERAHERTZ RADIATION GENERATION | 2022 |
|
RU2787544C1 |
| MULTIBARRIER HETEROSTRUCTURE FOR GENERATION OF POWERFUL ELECTROMAGNET RADIATION OF SUB- AND TERAHERTZ RANGES | 2012 |
|
RU2499339C1 |
| PLANAR GUNN DIODE | 2021 |
|
RU2780380C1 |
| GUNN DIODE | 2011 |
|
RU2456715C1 |
| METHOD OF GENERATING ELECTROMAGNETIC OSCILLATIONS IN MICROWAVE AND EHF RANGES WITH ULTRA-WIDEBAND FREQUENCY TUNING | 2010 |
|
RU2494526C2 |
| STRUCTURE FOR GENERATING SUB-TERAHERTZ AND TERAHERTZ RANGE ELECTROMAGNETIC RADIATION | 2012 |
|
RU2503091C1 |
| SUB-TERAHERTZ RADIATION DETECTOR BASED ON GRAPHENE | 2019 |
|
RU2697568C1 |
| GENERATOR WITH ELEMENT HAVING NEGATIVE RESISTANCE | 2010 |
|
RU2486660C1 |
| METHOD FOR GENERATION OF MICROWAVE ELECTROMAGNET OSCILLATIONS | 2007 |
|
RU2356128C2 |
| SEMICONDUCTOR DEVICE WITH INTERVALLEY TRANSFER OF ELECTRONS | 2008 |
|
RU2361324C1 |
