FIELD: thermoplasmonics.
SUBSTANCE: method for creating a controlled subwavelength temperature profile, which consists of taking a plasmonic metasurface, applying continuous laser radiation to it, under the influence of which plasmonic nanostructures generate heat and an ordered array of voxels A:B of the plasmonic metasurface becomes a system of point-distributed heat sources at nanoscale. The maximum value of the heating temperature of voxels A:B is set by the height of the nanostructure B, and the intensity of laser radiation makes it possible to control the temperature in the range of operating temperatures specified by the height of the nanostructure B. The heating temperature of voxels A:B is determined by the balance between the power absorbed by plasmonic nanostructures A under the action of laser radiation and the mechanism of heat conduction with the environment. Under the action of continuous laser radiation, a subwavelength temperature profile is created on the surface of the plasmonic metasurface, the spatial scale of which is determined by the dimensions of the nanostructure A. Next, the Raman scattering spectra of voxels A:B (the material of the nanostructure A or the material of the nanostructure B) are measured at a certain value of the laser radiation intensity. Next, according to the spectra of Raman scattering of light, the heating temperature of the A:B voxels and the subwavelength temperature profile created by them are determined using Raman thermometry. A plasmonic metasurface is also claimed for implementation of this method, containing a substrate of arbitrary shape, the material of which is selected from silicon, silicon oxide, or aluminium oxide. A layer of metal nitride of the transition group from titanium nitride, zirconium nitride, or hafnium nitride is deposited on the substrate surface in form of a thin film with a thickness in the range from 10-500 nm. An ordered array of plasmonic nanostructures of the same shape is formed from a layer of transition group metal nitride of the same size in the following range: lateral size 10-500 nm, height 10-500 nm. From the substrate, an ordered array of nanostructures B of the same shape and the same size is formed in the following range: lateral size 10-500 nm, height 1-1000 nm. Nanostructures A and B are stacked on top of each other and represent an ordered array of voxels - structures A:B.
EFFECT: creation of a controlled subwave temperature profile at a fixed intensity of continuous laser radiation and the possibility of creating a controlled subwave temperature profile in environments where thermal conductivity significantly exceeds the thermal conductivity of the plasmonic material.
3 cl, 7 dwg
