FIELD: technological processes.
SUBSTANCE: present invention relates to a method of forming a titanium oxynitride TiON by thermal oxidation of a plasmon material in the form of a thin nanostructured film of titanium nitride. A thin nanostructured titanium nitride 100 nm thick film is synthesized on the surface of the silicon substrate. Said nanostructured film of titanium nitride is annealed by exposing said film to continuous laser radiation with excitation of surface plasmons, intensifying absorption of incident laser radiation by titanium nitride with provision of heating of titanium nitride in air atmosphere at temperature of 300 °C for 10–360 minutes for said thermal oxidation.
EFFECT: enabling formation of a titanium oxynitride TiON film with achieving the required dielectric permeability and with the possibility of implementing the disclosed method in air.
1 cl, 6 dwg, 4 ex
