PROCESS OF MANUFACTURE OF SELF-ALIGNED BUILT-IN COPPER METALLIZATION OF IN TEGRATED CIRCUITS Russian patent published in 2004 - IPC

FIELD: technology of production of multilevel interconnection of integrated circuits. SUBSTANCE: process of manufacture of self-aligned built-in copper metallization of integrated circuits includes deposition of dielectric film on substrate, formation of grooves of various shape in dielectric film, application of barrier film comprising several conducting layers, deposition of planar layer from liquid phase, stripping of planar layer with solvent in such manner that it remains in areas of grooves only, pickling of upper layer of barrier film in areas free from planar layer, stripping of planar layer from grooves with solvent, selective deposition of copper on surface of upper layer of barrier film till volumes of grooves are completely filled with copper, selective deposition of protective conducting layer on surface of grown film, selective removal of barrier film in areas free from copper, deposition of second dielectric film and repetition of above-mentioned operations for formation of next level of connecting conductors. EFFECT: diminished assortment of operations, reduced presence of flaws in manufactured structure, decreased usage of copper. 2 cl, 9 dwg