POWERFUL SOURCE OF TARGETED EXTREME ULTRAVIOLET RADIATION WITH WAVELENGTH OF 9-12 nm FOR HIGH-RESOLUTION PROJECTION LITHOGRAPHY Russian patent published in 2023 - IPC H05G2/00 G03F7/20 

FIELD: X-ray engineering.

SUBSTANCE: expanding nozzle of the gas injection system has a diameter that ensures the formation of a weakly diverging jet of inert gas. The gas injection system includes a gas receiver located on the axis of the inert gas jet at a distance from the nozzle, which is a pipe of variable diameter with an inlet opening that intercepts the entire inert gas jet, and is equipped with a gas recovery unit, which includes a high-performance vacuum pump, receivers and vacuum compressor and ensuring the collection and re-supply of gas to the gas injection system. In the center of the multilayer X-ray mirror there is a hole for introducing pulsed laser radiation into the vacuum chamber perpendicular to the axis of the inert gas jet, and the focus of the pulsed laser radiation is located on the surface of the inert gas jet facing the center of the X-ray mirror between the nozzle and the gas receiver. The type of gas, the density of the gas jet, the laser radiation power, and the size of its focal spot are selected to ensure gas breakdown, electron heating, and the formation of multiply charged ions with a charge optimal for the generation of EUV radiation lines lying in the range of 9-12 nm.

EFFECT: obtaining directed narrow-band EUV radiation with a wavelength in the range of 9-12 nm for high-resolution projection lithography with high average power.

9 cl, 2 dwg