FIELD: semiconductor devices.
SUBSTANCE: according to the invention, the surface of the silicon substrate is treated in a sandblasting unit, and silicon carbide (SiC) powder with a sand particle size of no more than 5-6 mcm is used as an abrasive material, while a stream of silicon carbide is directed onto the surface of the silicon wafer at a certain distance at the following technological modes: air pressure in the nozzle - 2±0.3 kg/cm2, time - 6±0.1 minutes, distance from the nozzle to the plate surface - 15±5 cm, and table rotation speed - 15±5 rpm.
EFFECT: surface has good adhesive properties, the spread in plate thickness is no more than 1.5±0.01 mcm, and occurrence of microcracks, mechanical stresses, irregularities, and chips is eliminated.
1 cl, 3 ex
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