PROCESSING OF SILICON SUBSTRATE Russian patent published in 2016 - IPC H01L21/302 

FIELD: process engineering.

SUBSTANCE: invention relates to fabrication of solid-state devices, particularly, to processing of silicon substrate backs before built-up processes. Claimed process consists in that the jet of particles of silicon carbide, their sizes not exceeding 6 mcm, is sprayed on silicon plate surface under the following process conditions: air pressure in the nozzle - 2.5±0.3 kg/cm², time - 5±0.1 minutes and table revolution speed - 20±4 rpm. Note here that the surface features good adhesive properties, plate depth scatter not exceeding 1.5±0.01 mcm, and rules out the origination of microfractures and mechanical strains that deteriorate the surface quality.

EFFECT: good adhesive properties, no mechanical strains or fractures, or chips.

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