INTEGRATED HIGH-FREQUENCY MICROELECTROMECHANICAL SWITCH OF CAPACITIVE SWITCHING PRINCIPLE WITH HIGH CAPACITANCE FACTOR Russian patent published in 2024 - IPC H01H59/00 

Abstract RU 2823127 C1

FIELD: microsystem equipment.

SUBSTANCE: invention relates to microsystem equipment and can be used in integrated radio electronics for switching high-frequency radio signals over transmission lines. Integral high-frequency microelectromechanical switch of capacitive switching principle with high capacitance factor comprises a suspended movable electrode of an electrostatic drive, made in the form of a plate from a conducting metal material, divided into a left and a right area of electrostatic activation, which are connected to each other by a jumper made of conducting metal material, two pairs of suspended elastic zigzag-shaped suspension elements, made of conductive metal material, characterized by low stiffness coefficient, which enables to significantly reduce the value of the constant control voltage, two supporting-armature elements of the structure, made of a conductive metal material, lower fixed electrode of electrostatic drive, made of conducting material, divided into left and right electrostatic activation area, thin passivation layers made of dielectric material, two flat thin-film variable capacitance capacitors with metal-dielectric-metal plates, formed by the left and right electrostatic activation area of the lower fixed electrode of the electrostatic drive, by thin passivation layers located on their surface, as well as left and right electrostatic activation area of suspended movable electrode of electrostatic drive, through perforations in the plate of the suspended movable electrode of the electrostatic drive, the main control flat thin-film capacitor of constant high capacity with metal-dielectric-metal plates.

EFFECT: reduction of electromechanical and weight and size characteristics of the switch, possibility of performing detailed adjustment of the effective operating frequency range and the central resonance frequency at the design stage of the switch, characterized by low value of constant control voltage 3.5 V for electrostatic activation, which is compatible with integral radio electronics with a short time required to complete a cycle of the operation of closing and opening switch of 6.35 mcs and 3.1 mcs, respectively.

1 cl, 9 dwg

Similar patents RU2823127C1

Title Year Author Number
INTEGRATED MICROELECTROMECHANICAL SWITCH 2018
  • Lysenko Igor Evgenevich
  • Konoplev Boris Georgievich
  • Tkachenko Aleksej Vyacheslavovich
  • Isaeva Alina Sergeevna
RU2705792C1
INTEGRATED MICROELECTROMECHANICAL SWITCH 2018
  • Lysenko Igor Evgenevich
  • Konoplev Boris Georgievich
  • Tkachenko Aleksej Vyacheslavovich
  • Isaeva Alina Sergeevna
RU2705564C1
HIGH-SPEED SUPERCONDUCTING SWITCH 2008
  • Kuz'Min Leonid Sergeevich
  • Jasin Gassan
  • Tarasov Mikhail Aleksandrovich
  • Otto Ehrnst
RU2381597C1
MILLIMETER OPTICALLY CONTROLLING RANGE 2018
  • Lukyanov Anton Sergeevich
  • Shepeleva Elena Aleksandrovna
  • Nikishov Artem Yurevich
  • Evtyushkin Gennadij Aleksandrovich
  • Makurin Mikhail Nikolaevich
  • Kim Ki So
  • Yang Dongil
  • Li Dzhong In
RU2685768C1
OPTICALLY-CONTROLLED SWITCH OF MILLIMETER RANGE WITH BUILT-IN LIGHT SOURCE, BASED ON TRANSMISSION LINE WITH SEMICONDUCTOR SUBSTRATE 2019
  • Shepeleva Elena Aleksandrovna
  • Makurin Mikhail Nikolaevich
  • Lee Chongmin
RU2721303C1
RADIO-FREQUENCY MICROELECTROMECHANICAL SWITCH (RF MEMS-SWITCH) WITH FLEXIBLE AND FREE MEMBRANE OF SWITCH 2006
  • Mije Oliv'E
RU2433499C2
WAVEGUIDE WITH COPLANAR WAVEGUIDE TRANSMISSION LINE 2020
  • Safronov Aleksandr Nikolaevich
  • Kornilov Ivan Sergeevich
RU2743070C1
BROADBAND HIGH-FREQUENCY SIGNAL TRANSMISSION DEVICE 2005
  • Chehn Ki
  • Mishal'Ski Bernkhard
RU2349994C2
SEMICONDUCTOR LASER EMITTER WITH BAND MODULATION IN MICROWAVE RANGE 2008
  • Vasil'Ev Mikhail Grigor'Evich
  • Belkin Mikhail Evseevich
  • Sheljakin Aleksej Alekseevich
RU2421857C2
DEVICE AND METHOD FOR HIGH-FREQUENCY HEATING OF DIELECTRIC LIQUID 2009
  • Przhibila Jan S.
RU2497315C2

RU 2 823 127 C1

Authors

Tkachenko Aleksei Viacheslavovich

Lysenko Igor Evgenevich

Denisenko Mark Anatolevich

Dates

2024-07-18Published

2023-10-04Filed