FIELD: microsystem equipment.
SUBSTANCE: invention can be used in integrated radio electronics. Integral high-frequency switch comprises a plate of a suspended movable electrode of a small-area electrostatic drive with a small thickness of the dielectric layer and a small value of the air gap between them, in the form of a plate from a conducting metal material, divided into a left and a right region of electrostatic activation, which are connected to each other by a jumper made of conducting metal material, located with some air gap and symmetrically on the left and right sides relative to the conductor of the radio signal transmission line of the high-frequency coplanar waveguide. Switch design allows reducing its electromechanical and weight and size characteristics, perform more detailed adjustment of the effective operating frequency range and the central resonance frequency at the design stage of the switch, with low value of constant control voltage of 3.5 V for electrostatic activation of switch, which is compatible with integral radio electronics, in particular with modern antennae, telecommunication and radar devices, ground and satellite radio communication devices, with high dynamic characteristics, namely short time required for the switch closing and opening cycle of 6.25 mcs and 3.2 mcs respectively.
EFFECT: possibility of switching high-frequency radio signals with an effective frequency range in the S-frequency range, namely in the frequency range from 2 GHz to 4 GHz with central resonance frequency 3,6 GHz, value of insertion loss in open state of switch not less than 0,05 dB at central resonance frequency 3,6 GHz, isolation in the closed state of the switch is not less than 43 dB at the central resonance frequency of 3,6 GHz with the value of the introduced contact resistance of not more than 0,15 Ohm, with high Q factor and linearity, high quality factor of the switch design, high capacitance factor of switch—14,900.
1 cl, 9 dwg
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Authors
Dates
2024-10-22—Published
2023-12-11—Filed