INTEGRATED HIGH-FREQUENCY MICROELECTROMECHANICAL SWITCH OF CAPACITIVE SWITCHING PRINCIPLE WITH HIGH CAPACITANCE FACTOR Russian patent published in 2024 - IPC H01H59/00 

Abstract RU 2829031 C1

FIELD: microsystem equipment.

SUBSTANCE: invention can be used in integrated radio electronics. Integral high-frequency switch comprises a plate of a suspended movable electrode of a small-area electrostatic drive with a small thickness of the dielectric layer and a small value of the air gap between them, in the form of a plate from a conducting metal material, divided into a left and a right region of electrostatic activation, which are connected to each other by a jumper made of conducting metal material, located with some air gap and symmetrically on the left and right sides relative to the conductor of the radio signal transmission line of the high-frequency coplanar waveguide. Switch design allows reducing its electromechanical and weight and size characteristics, perform more detailed adjustment of the effective operating frequency range and the central resonance frequency at the design stage of the switch, with low value of constant control voltage of 3.5 V for electrostatic activation of switch, which is compatible with integral radio electronics, in particular with modern antennae, telecommunication and radar devices, ground and satellite radio communication devices, with high dynamic characteristics, namely short time required for the switch closing and opening cycle of 6.25 mcs and 3.2 mcs respectively.

EFFECT: possibility of switching high-frequency radio signals with an effective frequency range in the S-frequency range, namely in the frequency range from 2 GHz to 4 GHz with central resonance frequency 3,6 GHz, value of insertion loss in open state of switch not less than 0,05 dB at central resonance frequency 3,6 GHz, isolation in the closed state of the switch is not less than 43 dB at the central resonance frequency of 3,6 GHz with the value of the introduced contact resistance of not more than 0,15 Ohm, with high Q factor and linearity, high quality factor of the switch design, high capacitance factor of switch—14,900.

1 cl, 9 dwg

Similar patents RU2829031C1

Title Year Author Number
INTEGRATED HIGH-FREQUENCY MICROELECTROMECHANICAL SWITCH OF CAPACITIVE SWITCHING PRINCIPLE WITH HIGH CAPACITANCE FACTOR 2023
  • Tkachenko Aleksei Viacheslavovich
  • Lysenko Igor Evgenevich
  • Denisenko Mark Anatolevich
RU2823127C1
INTEGRATED MICROELECTROMECHANICAL SWITCH 2018
  • Lysenko Igor Evgenevich
  • Konoplev Boris Georgievich
  • Tkachenko Aleksej Vyacheslavovich
  • Isaeva Alina Sergeevna
RU2705792C1
INTEGRATED MICROELECTROMECHANICAL SWITCH 2018
  • Lysenko Igor Evgenevich
  • Konoplev Boris Georgievich
  • Tkachenko Aleksej Vyacheslavovich
  • Isaeva Alina Sergeevna
RU2705564C1
HIGH-SPEED SUPERCONDUCTING SWITCH 2008
  • Kuz'Min Leonid Sergeevich
  • Jasin Gassan
  • Tarasov Mikhail Aleksandrovich
  • Otto Ehrnst
RU2381597C1
MILLIMETER OPTICALLY CONTROLLING RANGE 2018
  • Lukyanov Anton Sergeevich
  • Shepeleva Elena Aleksandrovna
  • Nikishov Artem Yurevich
  • Evtyushkin Gennadij Aleksandrovich
  • Makurin Mikhail Nikolaevich
  • Kim Ki So
  • Yang Dongil
  • Li Dzhong In
RU2685768C1
OPTICALLY-CONTROLLED SWITCH OF MILLIMETER RANGE WITH BUILT-IN LIGHT SOURCE, BASED ON TRANSMISSION LINE WITH SEMICONDUCTOR SUBSTRATE 2019
  • Shepeleva Elena Aleksandrovna
  • Makurin Mikhail Nikolaevich
  • Lee Chongmin
RU2721303C1
THIN-FILM MULTILAYER ELECTRODE COUPLED BY HIGH-FREQUENCY ELECTROMAGNETIC FIELD, HIGH-FREQUENCY TRANSMISSION LINE, HIGH-FREQUENCY RESONATOR, HIGH-FREQUENCY FILTER, HIGH- FREQUENCY BAND-PASS REJECTION FILTER AND HIGH-FREQUENCY DEVICE 1994
  • Eukhei Isikava
  • Seidzi Khidaka
RU2139613C1
PYROELECTRIC CONVERTER OF ELECTROMAGNETIC WAVES 2014
  • Chesnokov Vladimir Vladimirovich
  • Chesnokov Dmitrij Vladimirovich
RU2570235C1
RADIO-FREQUENCY MICROELECTROMECHANICAL SWITCH (RF MEMS-SWITCH) WITH FLEXIBLE AND FREE MEMBRANE OF SWITCH 2006
  • Mije Oliv'E
RU2433499C2
OFF-SET TOP PIXEL ELECTRODE CONFIGURATION 2009
  • Fon Verne Tim
  • Rejnolds Kiran
  • Pui Boon Khean
RU2499326C2

RU 2 829 031 C1

Authors

Tkachenko Aleksei Viacheslavovich

Lysenko Igor Evgenevich

Denisenko Mark Anatolevich

Dates

2024-10-22Published

2023-12-11Filed