FIELD: electronic equipment.
SUBSTANCE: invention relates to microsystem equipment and can be used in integrated electronics for signal switching. Technical result is achieved by introducing two electrostatic drives, first of which comprises capacitive switching element formed by electrostatic drive fixed lower electrode, made of conductor material, built-in to coplanar waveguide transmission line with applied on its surface dielectric layer, located with clearance under movable electrode of electrostatic drive, made in the form of a plate with perforation from conductor material, fixed on the substrate using four support elements made of conductive material and located directly on the grounding lines of the coplanar waveguide, by means of elastic suspension elements, made in the form of meander corrugated beams of conductor material, fixed electrostatic drive top electrode, made in form of a plate with perforation from conductor material with transverse elastic beams of conductor material applied to its surface, fixed on four support elements located directly on substrate, second electrostatic drive consisting of two movable electrodes of electrostatic drive, made of conductor material in form of comb structures on one side, arranged symmetrically on both sides of movable electrode of first electrostatic drive and fixed on support elements of movable electrode of first electrostatic drive by means of two pairs of elastic suspensions, made in the form of elastic beams of conductor material and two resilient elements made of conductive material and fixed directly to the movable electrode of the first electrostatic drive, two fixed electrodes of electrostatic drive made of conductor material in form of comb structures on one side and located directly on substrate on both sides of movable electrodes of second electrostatic drive with possibility of electrostatic interaction with them in plane of their plates through side gaps and interpenetrating each other by combs of electrodes.
EFFECT: commutation of centimeter wave range signals with low insertion loss, low inductance, low bias voltage, short switching time from one state to another, elimination of sensitivity to vibrations, external accelerations, exclusion of arbitrary actuation of the switch during switching of signals of high power, increase of rigidity of the structure of the upper electrodes of the electrostatic drive.
1 cl, 2 dwg
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Authors
Dates
2019-11-08—Published
2018-12-20—Filed