METHOD OF LOW-TEMPERATURE PLASMA-ACTIVATED HETEROEPITAXY OF NANO-DIMENSIONAL NITRIDE METAL FILMS OF THE THIRD GROUP OF MENDELEEV TABLE Russian patent published in 2018 - IPC H01L21/205 C30B23/02 B82B1/00 

FIELD: technological processes.

SUBSTANCE: invention is intended for production of heteroepitaxial structures for manufacture of LEDs, photodetectors, semiconductor lasers, transistors and diodes. Invention is based on the method of low-temperature plasma-activated heteroepitaxy. In this method, III-nitride film is synthesized by a cyclic process in which each cycle consists of four stages: impulse supply of a limited volume of organo-metallic compound (OMC) to a reactor in order to form a layer of chemically adsorbed OMC radicals on the substrate surface with a density of less than 95 % of the density achieved in a self-limiting growth regime; reactor purging with an inert gas to remove products of chemical reactions involving OMC; processing a substrate in a plasma of a gas mixture of nitrogen and hydrogen to saturate the surface with nitrogen, which, interacting with the OMC radicals, forms nucleating seed of an aluminum nitride layer; stage of reactor ventilation after the stage of plasma activation.

EFFECT: increase in the crystallinity of heteroepitaxial III-nitride films grown at temperatures below 500 °C on a single-crystal sapphire plate, silicon carbide or on a heterostructure with a top layer of III-nitride.

1 cl, 3 dwg