FIELD: electronics.
SUBSTANCE: multilayer magnetic film with a Dzyaloshinskii–Moriya interaction comprises a substrate on which a medium is formed from a non-magnetic layer with a strong spin-orbit coupling and a ferromagnetic layer, wherein multilayer magnetic film of type "substrate/B/X1/Y/X2" with perpendicular magnetic anisotropy comprises semiconductor substrate from Si with orientation (111), buffer layer B from Cu with thickness of 1–5 nm, non-magnetic layer X1 of Pd with thickness of 3–15 nm, which has root-mean-square roughness of 0.25–0.8 nm and average radius of island of 8.5–12.2 nm, ferromagnetic layer Y of Co with thickness of 0.5–15 nm and non-magnetic layer X2 from Pd with thickness of 0.5–5 nm.
EFFECT: high density of recording information, and speed of reading/writing data storage devices, and operation of logical devices based on magnetic films.
2 cl, 7 dwg
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