ISLAND MAGNETORESISTIVE SENSOR Russian patent published in 2024 - IPC H10N50/10 

Abstract RU 2831496 C1

FIELD: measuring.

SUBSTANCE: invention can be used to control the value of magnetic field induction in various devices. Essence of the invention consists in the fact that the island magnetoresistive sensor consists of ferromagnetic layers of alternating metals of magnetically soft Ni and magnetically hard Co, wherein the ferromagnetic layers are island films, the base used is a dielectric substrate made from glass, ceramics or glass-ceramic, and conducting copper contact pads are located above and below the array of layers. Between island ferromagnetic layers the sensor contains a dielectric layer of Al2O3.

EFFECT: possibility of detecting weak magnetic fields with induction of 0.02-200 mcT with accuracy of about 1 nT at pressure from 105 Pa to 10-3 Pa and temperature from minus 100 °C to plus 350 °C.

3 cl, 4 dwg

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RU 2 831 496 C1

Authors

Sidorova Svetlana Vladimirovna

Kirianov Sergei Vladimirovich

Dates

2024-12-09Published

2024-07-12Filed