SEMICONDUCTOR FORCE SENSOR Russian patent published in 2024 - IPC G01L1/22 

FIELD: instrumentation.

SUBSTANCE: invention relates to instrument engineering and can be used to create semiconductor force sensors for medium and high loads. Semiconductor force sensor (SFS) contains a membrane with a power rod and a bridge of semiconductor resistive strain gauges (SRSG). Membrane is clamped on its cylindrical base on two sides: from above – by force-receiving hemisphere and at the centre by force-transmitting platform of hemisphere, and from below – by cylindrical support of sensor (D). On one side, the membrane has a V-shaped profile and a power rod with a hemisphere at the end, which is monolithically connected to it in the centre, which rests against the force-transmitting platform of the hemisphere, and on the other side, it has a flat surface on which, as well as on the SFS substrate, on the back side layer of aluminium oxide is applied. Substrate with two bridges of SRSG of p⁺-type conductivity, which has a rectangular shape, is fixed on the membrane. Substrate is made in one of three versions: from sapphire, and longitudinal axes of SRSG coincide with crystallographic direction [110]; from silicon of n-type conductivity, and longitudinal axes of SRSG coincide with crystallographic direction [111]; from sapphire, and the longitudinal axes of the SRSG are mutually perpendicular and coincide with the crystallographic directions [110] and [10], wherein the area of the substrate is equal to the area of the membrane.

EFFECT: high accuracy and reliability of measurements, as well as possibility of using structures and steels of different properties for resilient elements of sensors for high loads.

4 cl, 5 dwg