METHOD OF PRODUCING THIN FILM OF CuGaSe Russian patent published in 2024 - IPC H01L31/18 

FIELD: chemistry.

SUBSTANCE: invention can be used for synthesis of CuGaSe₂ films, used as an upper element of a solar battery in tandem with a lower element from CuInSe₂, in light-emitting diodes and various non-linear optoelectronic devices. Essence of the invention consists in the fact that the method of producing a CuGaSe₂ film includes a multi-step selenisation of a Cu-Ga film, in an experimental two-zone thermodiffusion apparatus with the participation of a carrier gas (N₂) of the reaction component (Se) with an upgraded gas inlet system, wherein the selenisation process is carried out with exposures for 10 minutes at temperatures of 200, 300, 400 and 550 °C, wherein at the first and second stages pressure of steam-gas mixture N₂+ Se is equal to 10^-3 Pa, at the third stage – 10^-1 Pa, and at the fourth stage – 10⁵ Pa, and the film is cooled to room temperature in the mode of the switched-off furnace.

EFFECT: creation of a method of producing a CuGaSe₂ film with properties which enable use thereof as an upper element of a solar battery in tandem with a lower element from CuInSe₂, in light-emitting diodes and various nonlinear optoelectronic devices.

1 cl, 5 dwg