FIELD: physics.
SUBSTANCE: in method for production of thin films of copper and indium diselenide, film is produced in two-zone furnace by means of selenium vapors transfer by gas-carrier flow from one temperature zone into another on surface of previously prepared copper-indium powder target. The target itself is produced by melting of metal components of stoichiometric composition in solid phase in equal weight ratios with further crushing of alloy in powder, its pressing and sputtering of Cu-In of stoichiometric composition onto substrate, for instance, by means of vacuum magnetron sputtering.
EFFECT: production of well-shaped and tightly packed CuInSe2 films; possibility to control chemical composition of films on large areas and in large volumes, which is important in production conditions; reduction in semiconductors cost, increased coefficient of components usage.
1 dwg
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