METHOD FOR PRODUCTION OF THIN FILMS Cu(In, Ga)(S, Se) Russian patent published in 2009 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method for production of thin films Cu(In,Ga)(S,Se)₂ is realised in double-stage process, in the first stage of which basic layer of metal components, and/or their binary selenides, and/or sulfides with atomic ratio of components required for synthesised compound is applied on substrate with conducting contact by method of vacuum sputtering, and at the second stage produced structure is sulfidised and selenidised. Metal films are sulfidised and selenidised in single technological stage in atmosphere created by continuous flow of inertial gas and vapours of sulphur and selenium from sources that are unlimited for the time of reaction, at temperatures of 220-550°C for the time required for generation of single-phase Cu(In,Ga)(S,Se)₂ film.

EFFECT: production of single-phase films Cu(In,Ga)(S,Se)₂ with specified physical characteristics (width of prohibited zone, coefficient of optical absorption, etc) by means of components ratio control, simplification of production technology and increase of process ecological safety.

1 ex, 3 dwg